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arXiv · 1406.7475

Charge Offset Stability in Si Single Electron Devices with Al Gates

Neil M. Zimmerman·Chih-Hwan Yang·Nai Shyan Lai·Wee Han Lim·Andrew S. Dzurak
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Abstract

We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset drift instability.

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Neil M. Zimmerman, Chih-Hwan Yang, Nai Shyan Lai, Wee Han Lim, Andrew S. Dzurak. 2014-06-29. Charge Offset Stability in Si Single Electron Devices with Al Gates. https://doi.org/10.1088/0957-4484%2F25%2F40%2F405201

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