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arXiv · 1407.5413

PtSi Clustering In Silicon Probed by Transport Spectroscopy

Massimo Mongillo·Panayotis Spathis·Georgios Katsaros·Riccardo Rurali·Xavier Cartoixa·Pascal Gentile·Silvano de Franceschi
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Abstract

Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is reduced below a few tens of nanometers. Here we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states.

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Massimo Mongillo, Panayotis Spathis, Georgios Katsaros, Riccardo Rurali, Xavier Cartoixa, Pascal Gentile, Silvano de Franceschi. 2014-07-21. PtSi Clustering In Silicon Probed by Transport Spectroscopy. https://doi.org/10.1103/physrevx.3.041025

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