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arXiv · 1407.7438

Generation of spin-polarized currents via cross-relaxation with dynamically pumped paramagnetic impurities

Carlos A. Meriles·Marcus W. Doherty
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Abstract

Key to future spintronics and spin-based information processing technologies is the generation, manipulation, and detection of spin polarization in a solid state platform. Here, we theoretically explore an alternative route to spin injection via the use of dynamically polarized nitrogen-vacancy (NV) centers in diamond. We focus on the geometry where carriers and NV centers are confined to proximate, parallel layers and use a 'trap-and-release' model to calculate the spin cross-relaxation probabilities between the charge carriers and neighboring NV centers. We identify near-unity regimes of carrier polarization depending on the NV spin state, applied magnetic field, and carrier g-factor. In particular, we find that unlike holes, electron spins are distinctively robust against spin-lattice relaxation by other, unpolarized paramagnetic centers. Further, the polarization process is only weakly dependent on the carrier hopping dynamics, which makes this approach potentially applicable over a broad range of temperatures.

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Carlos A. Meriles, Marcus W. Doherty. 2014-07-15. Generation of spin-polarized currents via cross-relaxation with dynamically pumped paramagnetic impurities. https://doi.org/10.1063/1.4890096

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