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arXiv · 1408.1427

Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments

F. Volmer·M. Drögeler·E. Maynicke·N. von den Driesch·M. L. Boschen·G. Güntherodt·C. Stampfer·B. Beschoten
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Abstract

By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to non-linear characteristics in the respective differential dV-dI-curves. With this manipulation of the contacts both spin lifetime and amplitude of the spin signal can significantly be increased by a factor of seven in the same device. This demonstrates that contact-induced spin dephasing is the bottleneck for spin transport in graphene devices with small $R_cA$ values. With increasing $R_cA$ values, we furthermore observe the appearance of a second charge neutrality point (CNP) in gate dependent resistance measurements. Simultaneously, we observe a decrease of the gate voltage separation between the two CNPs. The strong enhancement of the spin transport properties as well as the changes in charge transport are explained by a gradual suppression of a Co/graphene interaction by improving the oxide barrier during oxygen treatment.

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F. Volmer, M. Drögeler, E. Maynicke, N. von den Driesch, M. L. Boschen, G. Güntherodt, C. Stampfer, B. Beschoten. 2014-08-06. Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments. https://doi.org/10.1103/physrevb.90.165403

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