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arXiv · 1408.5831

Near field thermal memory device

S. A. Dyakov·J. Dai·M. Yan·M. Qiu
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Abstract

We report the concept of a near-field memory device based on the radiative bistability effect in the system of two closely separated parallel plates of SiO$_2$ and VO$_2$ which exchange heat by thermal radiation in vacuum. We demonstrate that the VO$_2$ plate, having metal-insulator transition at 340 K, has two thermodynamical steady-states. One can switch between the states using an external laser impulse. We show that due to near-field photon tunneling between the plates, the switching time is found to be only 5 ms which is several orders lower than in case of far field.

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S. A. Dyakov, J. Dai, M. Yan, M. Qiu. 2014-08-25. Near field thermal memory device. https://arxiv.org/abs/1408.5831

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