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arXiv · 1409.1074

Spin transport in dangling-bond wires on doped H-passivated Si(100)

Mikaël Kepenekian·Roberto Robles·Riccardo Rurali·Nicolás Lorente
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Abstract

New advances in single-atom manipulation are leading to the creation of atomic structures on H passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and electron-transport calculations to reveal the properties and understand the features of atomic wires crafted by H removal from the surface. The presence of dopants radically change the wire properties. Our calculations show that dopants have a tendency to approach the dangling-bond wires, and in these conditions, transport is enhanced and spin selective. These results have important implications in the development of atomic-scale spintronics showing that boron, and to a lesser extent phosphorous, convert the wires in high-quality spin filters.

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Mikaël Kepenekian, Roberto Robles, Riccardo Rurali, Nicolás Lorente. 2014-09-03. Spin transport in dangling-bond wires on doped H-passivated Si(100). https://doi.org/10.1088/0957-4484%2F25%2F46%2F465703

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