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arXiv · 1409.2598

Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

T. Charikova·V. Okulov·A. Gubkin·A. Lugovikh·K. Moiseev·V. Nevedomsky·Yu. Kudriavstev·S. Gallardo·M. Lopez
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Abstract

The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn $δ$-layer thicknesses near GaInAs-quantum well ($\sim$3 nm) in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.

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T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavstev, S. Gallardo, M. Lopez. 2014-09-09. Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese. https://doi.org/10.1063/1.4906539

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