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arXiv · 1409.6887

Origin of traps and charge transport mechanism in hafnia

D. R. Islamov·V. A. Gritsenko·C. H. Cheng·A. Chin
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Abstract

In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO$_2$. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. The thermal trap energy of 1.25 eV in HfO$_2$ was determined based on the charge transport experiments.

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D. R. Islamov, V. A. Gritsenko, C. H. Cheng, A. Chin. 2014-09-26. Origin of traps and charge transport mechanism in hafnia. https://doi.org/10.1063/1.4903169

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