arXiv · 1409.7974
Aharonov-Bohm effect in clean strong topological insulator wires
Abstract
Surface electrons of strong topological insulator wires acquire a Berry phase difference of $\pi$ on orbiting the wire. This can be detected in response of clean wires (whose Fermi level is tuned to the Dirac point) to the presence of the Aharonov-Bohm flux. Specifically, at half-odd integer applied flux (in units of $hc/e$), long wires undergo semimetal-semiconductor transitions characterized by logarithmically divergent susceptibility. Associated with these are oscillations of magnetization (persistent current) that vanish both at integer and half-odd integer flux. Additionally wires of arbitrary aspect ratio exhibit conductance maxima at half-odd integer applied flux and minima at integer flux. For long wires the maxima are sharp with their height approaching $e^{2}/h$. Short wires are characterized by a universal conductivity $e^{2}/\pi h$ attained in the disc limit.
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Eugene B. Kolomeisky, Joseph P. Straley. 2014-09-29. Aharonov-Bohm effect in clean strong topological insulator wires. https://arxiv.org/abs/1409.7974
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