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arXiv · 1410.8541

Coding scheme for 3D vertical flash memory

Yongjune Kim·Robert Mateescu·Seung-Hwan Song·Zvonimir Bandic·B. V. K. Vijaya Kumar
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Abstract

Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction. However, 3D vertical flash memory suffers from a new problem known as fast detrapping, which is a rapid charge loss problem. In this paper, we propose a scheme to compensate the effect of fast detrapping by intentional inter-cell interference (ICI). In order to properly control the intentional ICI, our scheme relies on a coding technique that incorporates the side information of fast detrapping during the encoding stage. This technique is closely connected to the well-known problem of coding in a memory with defective cells. Numerical results show that the proposed scheme can effectively address the problem of fast detrapping.

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Yongjune Kim, Robert Mateescu, Seung-Hwan Song, Zvonimir Bandic, B. V. K. Vijaya Kumar. 2015-02-10. Coding scheme for 3D vertical flash memory. https://doi.org/10.1109/icc.2015.7248332

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