Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene

Z. Y. Zhang; Jiafeng Xie; D. Z. Yang; Y. H. Wang; M. S. Si; D. S. Xue

doi:10.7567/apex.8.055201

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arXiv · 1411.3165

Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene

Z. Y. Zhang·Jiafeng Xie·D. Z. Yang·Y. H. Wang·M. S. Si·D. S. Xue

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Abstract

In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons. Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approach as high as several thousand square centimeters per volt-second and simultaneously exhibit high directional anisotropy. All these make few-layer arsenene promising for device applications in semiconducting industry.

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Z. Y. Zhang, Jiafeng Xie, D. Z. Yang, Y. H. Wang, M. S. Si, D. S. Xue. 2015-04-19. Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene. https://doi.org/10.7567/apex.8.055201

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