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arXiv · 1411.4714

Tunneling transport in a few monolayer-thick WS2/graphene heterojunction

Takehiro Yamaguchi·Rai Moriya·Yoshihisa Inoue·Sei Morikawa·Satoru Masubuchi·Kenji Watanabe·Takashi Taniguchi·Tomoki Machida
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Abstract

This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a few monolayers in thickness. Investigation of vertical transport in WS2 and MoS2 TMDs in graphene/TMD/metal heterostructures revealed that WS2 exhibits tunnel barrier characteristics when its thickness is between 2 to 5 monolayers, whereas MoS2 experiences a transition from tunneling to thermionic emission transport with increasing thickness within the same range. Tunnel resistance in a graphene/WS2/metal heterostructure therefore increases exponentially with the number of WS2 layers, revealing the tunnel barrier height of WS2 to be 0.37 eV.

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Takehiro Yamaguchi, Rai Moriya, Yoshihisa Inoue, Sei Morikawa, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida. 2014-12-09. Tunneling transport in a few monolayer-thick WS2/graphene heterojunction. https://doi.org/10.1063/1.4903190

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