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arXiv · 1411.6565

Intrinsic interface states in InAs-AlSb heterostructures

F. Raouafi·R. Benchamekh·M. O. Nestoklon·J-M. Jancu·P. Voisin
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Abstract

We examine the possibility of intrinsic interface states bound to the plane of In-Sb chemical bonds at InAs/AlSb interfaces. Careful parameterization of the bulk materials in the frame of the extended basis spds^* tight-binding model and recent progress in predictions of band offsets severely limit the span of tight-binding parameters describing this system. We find that a heavy-hole like interface state bound to the plane of In-Sb bonds exists for a large range of values of the InSb/InAs band offset.

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F. Raouafi, R. Benchamekh, M. O. Nestoklon, J-M. Jancu, P. Voisin. 2014-11-24. Intrinsic interface states in InAs-AlSb heterostructures. https://doi.org/10.1088/0953-8984/28/4/045001

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