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arXiv · 1412.3932

Incorporation of Mn in Al$_{x}$Ga$_{1-x}$N probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction and first-principles calculations

Mauro Rovezzi·Wolfgang Schlögelhofer·Thibaut Devillers·Nevill Gonzalez Szwacki·Tian Li·Rajdeep Adhikari·Pieter Glatzel·Alberta Bonanni
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Abstract

Synchrotron radiation x-ray absorption and emission spectroscopy techniques, complemented by high-resolution transmission electron microscopy methods and density functional theory calculations are employed to investigate the effect of Mn in Al$_{x}$Ga$_{1-x}$N:Mn samples with an Al content up to 100%. The atomic and electronic structure of Mn is established together with its local environment and valence state. A dilute alloy without precipitation is obtained for Al$_{x}$Ga$_{1-x}$N:Mn with Al concentrations up to 82%, and the surfactant role of Mn in the epitaxial process is confirmed.

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Mauro Rovezzi, Wolfgang Schlögelhofer, Thibaut Devillers, Nevill Gonzalez Szwacki, Tian Li, Rajdeep Adhikari, Pieter Glatzel, Alberta Bonanni. 2015-07-31. Incorporation of Mn in Al$_{x}$Ga$_{1-x}$N probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction and first-principles calculations. https://doi.org/10.1103/physrevb.92.115308

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