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arXiv · 1412.4105

Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2

A. Narayanan·M. D. Watson·S. F. Blake·Y. L. Chen·D. Prabhakaran·B. Yan·N. Bruyant·L. Drigo·I. I. Mazin·C. Felser·T. Kong·P. C. Canfield·A. I. Coldea
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Abstract

Cd3As2 is a candidate three-dimensional Dirac semi-metal which has exceedingly high mobility and non-saturating linear magnetoresistance that may be relevant for future practical applications. We report magnetotransport and tunnel diode oscillation measurements on Cd3As2, in magnetic fields up to 65 T and temperatures between 1.5K to 300K. We find the non-saturating linear magnetoresistance persist up to 65T and it is likely caused by disorder effects as it scales with the high mobility, rather than directly linked to Fermi surface changes even when approaching the quantum limit. From the observed quantum oscillations, we determine the bulk three-dimensional Fermi surface having signatures of Dirac behaviour with non-trivial Berry's phase shift, very light effective quasiparticle masses and clear deviations from the band-structure predictions. In very high fields we also detect signatures of large Zeeman spin-splitting (g~16).

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A. Narayanan, M. D. Watson, S. F. Blake, Y. L. Chen, D. Prabhakaran, B. Yan, N. Bruyant, L. Drigo, I. I. Mazin, C. Felser, T. Kong, P. C. Canfield, A. I. Coldea. 2014-12-12. Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2. https://doi.org/10.1103/physrevlett.114.117201

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