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arXiv · 1412.7451

Fractional Quantum Hall Effect at Landau Level Filling nu=4/11

W. Pan·K. W. Baldwin·K. W. West·L. N. Pfeiffer·D. C. Tsui
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Abstract

We report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling nu = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e^2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at nu = 3/8 and 5/13.

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W. Pan, K. W. Baldwin, K. W. West, L. N. Pfeiffer, D. C. Tsui. 2014-12-23. Fractional Quantum Hall Effect at Landau Level Filling nu=4/11. https://doi.org/10.1103/physrevb.91.041301

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