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arXiv · 1501.02370

Charge transport in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$

D. R. Islamov·T. V. Perevalov·V. A. Gritsenko·C. H. Cheng·A. Chin
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Abstract

In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$ is phonon-assisted tunneling between traps like in HfO$_2$ and ZrO$_2$. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf$_{0.5}$Zr$_{0.5}$O$_2$ were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf$_{0.5}$Zr$_{0.5}$O$_2$ was discussed.

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D. R. Islamov, T. V. Perevalov, V. A. Gritsenko, C. H. Cheng, A. Chin. 2015-03-04. Charge transport in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$. https://doi.org/10.1063/1.4914900

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