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arXiv · 1501.04646

Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures

Sergio C. de la Barrera·Randall M. Feenstra
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Abstract

A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in the current-voltage characteristics are explained in terms of the electrostatically-induced band gap, gate voltage modulation, density of states near the band edge, and resonances with the upper sub-band. These observations are compared to ones from similar heterostructures formed with monolayer graphene.

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Sergio C. de la Barrera, Randall M. Feenstra. 2015-03-02. Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures. https://doi.org/10.1063/1.4914324

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