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arXiv · 1501.06497

Granularity Controlled Non-Saturating Linear Magneto-resistance in Topological Insulator Bi2Te3 Films

Z. H. Wang·L. Yang·X. J. Li·X. T. Zhao·H. L. Wang·Z. D. Zhang·Xuan P. A. Gao
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Abstract

We report on the magneto-transport properties of chemical vapor deposition grown films of interconnected Bi2Te3 nanoplates. Similar to many other topological insulator (TI) materials, these granular Bi2Te3 films exhibit a linear magneto-resistance (LMR) effect which has received much recent attention. Studying samples with different degree of granularity, we find a universal correlation between the magnitude of the LMR and the average mobility (<μ>) of the films over nearly two orders of magnitude change of <μ>. The granularity controlled LMR effect here is attributed to the mobility fluctuation induced classical LMR according to the Parish-Littlewood theory. These findings have implications to both the fundamental understanding and magneto-resistive device applications of TI and small bandgap semiconductor materials.

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Z. H. Wang, L. Yang, X. J. Li, X. T. Zhao, H. L. Wang, Z. D. Zhang, Xuan P. A. Gao. 2015-12-28. Granularity Controlled Non-Saturating Linear Magneto-resistance in Topological Insulator Bi2Te3 Films. https://doi.org/10.1021/nl503083q

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