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arXiv · 1502.02013

The effect of bilayer domains on electronic transport properties of epitaxial graphene on SiC

Tom Yager·Arseniy Lartsev·Rositza Yakimova·Samuel Lara-Avila·Sergey Kubatkin
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Abstract

Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on Silicon Carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer- size dimensions. In contrast, SiC/G devices containing bilayer graphene domains display variations in their electronic properties linked to the amount of bilayer content.

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Tom Yager, Arseniy Lartsev, Rositza Yakimova, Samuel Lara-Avila, Sergey Kubatkin. 2015-02-06. The effect of bilayer domains on electronic transport properties of epitaxial graphene on SiC. https://arxiv.org/abs/1502.02013

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