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arXiv · 1502.06382

Sidewall depletion in nano-patterned LAO/STO heterostructures

M. Z. Minhas·H. H. Blaschek·F. Heyroth·G. Schmidt
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Abstract

We report the fabrication of nanostructures from the quasi-two-dimensional electron gas (q2DEG) formed at the LaAlO$_{3}$/ SrTiO$_{3}$ (LAO/STO) interface. The process uses electron beam lithography in combination with reactive ion etching. This technique allows to pattern high-quality structures down to lateral dimensions as small as $100$nm while maintaining the conducting properties without inducing conductivity in the STO substrate. Temperature dependent transport properties of patterned Hall bars of various widths show only a small size dependence of conductivity at low temperature as well as at room temperature. The deviation can be explained by a narrow lateral depletion region. All steps of the patterning process are fully industry compatible.

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M. Z. Minhas, H. H. Blaschek, F. Heyroth, G. Schmidt. 2015-02-23. Sidewall depletion in nano-patterned LAO/STO heterostructures. https://arxiv.org/abs/1502.06382

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