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arXiv · 1503.02758

Revised diode equation for Ideal Graphene-Semiconductor Schottky Junction

Shi-Jun Liang·Lay Kee Ang
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Abstract

In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.

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Shi-Jun Liang, Lay Kee Ang. 2015-03-10. Revised diode equation for Ideal Graphene-Semiconductor Schottky Junction. https://arxiv.org/abs/1503.02758

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