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arXiv · 1503.03809

Time-evolution of the GaAs(0 0 1) pre-roughening process

Z. Ding·D. W. Bullock·P. M. Thibado·V. P. LaBella·K. Mullen
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Abstract

The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this process are monitored with atomic-scale resolution using scanning tunneling microscopy. Surprisingly, pit formation dominates the early stages of island formation. Insight into the nucleation process is reported.

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Z. Ding, D. W. Bullock, P. M. Thibado, V. P. LaBella, K. Mullen. 2015-03-12. Time-evolution of the GaAs(0 0 1) pre-roughening process. https://doi.org/10.1016/s0039-6028(03)00916-6

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