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arXiv · 1503.04778

Electrical excitation of silicon-vacancy centers in single crystal diamond

Amanuel M. Berhane·Sumin Choi·Hiromitsu Kato·Toshiharu Makino·Norikazu Mizuochi·Satoshi Yamasaki·Igor Aharonovich
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Abstract

Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)- centres. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)- emission is promising for scalable nanophotonics devices employing colour centres in single crystal diamond.

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Amanuel M. Berhane, Sumin Choi, Hiromitsu Kato, Toshiharu Makino, Norikazu Mizuochi, Satoshi Yamasaki, Igor Aharonovich. 2015-03-16. Electrical excitation of silicon-vacancy centers in single crystal diamond. https://doi.org/10.1063/1.4919388

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