Growth Stress Induced Tunability of Dielectric Constant in Thin Films

K. V. L. V. Narayanachari; Hareesh Chandrasekar; Amiya Banerjee; K. B. R. Varma; Rajeev Ranjan; Navakanta Bhat; Srinivasan Raghavan

doi:10.1063/1.4939466

arXiv · 1503.08299

Growth Stress Induced Tunability of Dielectric Constant in Thin Films

K. V. L. V. Narayanachari·Hareesh Chandrasekar·Amiya Banerjee·K. B. R. Varma·Rajeev Ranjan·Navakanta Bhat·Srinivasan Raghavan

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Abstract

It is demonstrated here that growth stress has a substantial effect on the dielectric constant of zirconia thin films. The correct combination of parameters - phase, texture and stress - is shown to yield films with high dielectric constant and best reported equivalent oxide thickness of 0.8 nm. The stress effect on dielectric constant is twofold, firstly, by the effect on phase transitions and secondly by the effect on interatomic distances. We discuss and explain the physical mechanisms involved in the interplay between the stress, phase changes and the dielectric constant in detail.

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K. V. L. V. Narayanachari, Hareesh Chandrasekar, Amiya Banerjee, K. B. R. Varma, Rajeev Ranjan, Navakanta Bhat, Srinivasan Raghavan. 2015-03-28. Growth Stress Induced Tunability of Dielectric Constant in Thin Films. https://doi.org/10.1063/1.4939466

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