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arXiv · 1504.06687

Transferable tight binding model for strained group IV and III-V heterostructures

Yaohua P. Tan·Michael Povolotskyi·Tillmann Kubis·Timothy B. Boykin·Gerhard Klimeck
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Abstract

In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding parameters show good transferability when applied to strained bulk materials as well as ultra-thin superlattices.

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Yaohua P. Tan, Michael Povolotskyi, Tillmann Kubis, Timothy B. Boykin, Gerhard Klimeck. 2015-04-25. Transferable tight binding model for strained group IV and III-V heterostructures. https://arxiv.org/abs/1504.06687

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