Two dimensional electrons in (100) oriented silicon field effect structures in the region of low concentrations and high mobilities

V. T. Dolgopolov

doi:10.1134/s0021364015040062

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arXiv · 1504.07537

Two dimensional electrons in (100) oriented silicon field effect structures in the region of low concentrations and high mobilities

V. T. Dolgopolov

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Abstract

A comparative analysis of experimental data on electron transport in Si (100) MOSFETs in the region of high mobilities and strong electronelectron interaction is carried out. It is shown that electrons can be described by the model of a noninteracting gas with the renormalized mass and Lande factor, which allows experimentally verifiable predictions.

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V. T. Dolgopolov. 2015-04-28. Two dimensional electrons in (100) oriented silicon field effect structures in the region of low concentrations and high mobilities. https://doi.org/10.1134/s0021364015040062

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