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arXiv · 1505.00748

Doping effects on charge density instability in non-centrosymmetric PbxTaSe2

Azat Sharafeev·Raman Sankar·Alexander Glamazda·Kwang-Yong Choi·Robert Bohle·Peter Lemmens·Fangcheng Chou
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Abstract

We report on the investigation of vibrational and electronic properties of the Pb doped dichalcogenide PbxTaSe2 using Raman scattering experiments. We observe a marked variation of the main vibrational modes with Pb concentration x. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c axis direction [1]. The temperature and polarization dependence of Raman spectra of PbxTaSe2 revealed additional broad modes in the low frequency regime which are discussed in context of remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.

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Azat Sharafeev, Raman Sankar, Alexander Glamazda, Kwang-Yong Choi, Robert Bohle, Peter Lemmens, Fangcheng Chou. 2015-05-04. Doping effects on charge density instability in non-centrosymmetric PbxTaSe2. https://doi.org/10.1063/10.0006562

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