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arXiv · 1506.01140

The effect of perpendicular electric field on Temperature-induced plasmon excitations for intrinsic silicene

Jhao-Ying Wu·Chiun-Yan Lin·Godfrey Gumbs·Ming-Fa Lin
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Abstract

We use the tight-binding model and the random-phase approximation to investigate the intrinsic plasmon in silicene. At finite temperatures, an undamped plasmon is generated from the interplay between the intraband and the interband-gap transitions. The extent of the plasmon existence range in terms of momentum and temperature, which is dependent on the size of single-particle-excitation gap, is further tuned by applying a perpendicular electric field. The plasmon becomes damped in the interband-excitation region. A low damped zone is created by the field-induced spin split. The field-dependent plasmon spectrum shows a strong tunability in plasmon intensity and spectral bandwidth. This could make silicene a very suitable candidate for plasmonic applications.

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Jhao-Ying Wu, Chiun-Yan Lin, Godfrey Gumbs, Ming-Fa Lin. 2015-06-03. The effect of perpendicular electric field on Temperature-induced plasmon excitations for intrinsic silicene. https://arxiv.org/abs/1506.01140

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