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arXiv · 1506.01542

Magnetoresistance of doped silicon

Antonio Ferreira da Silva·Alexandre Levine·Zahra Sadre Momtaz·Henri Boudinov·Bo E. Sernelius
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Abstract

We have performed longitudinal magnetoresistance measurements on heavily n-doped silicon for donor concentrations exceeding the critical value for the metal-non-metal transition. The results are compared to those from a many-body theory where the donor-electrons are assumed to reside at the bottom of the many-valley conduction band of the host. Good qualitative agreement between theory and experiment is obtained.

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Antonio Ferreira da Silva, Alexandre Levine, Zahra Sadre Momtaz, Henri Boudinov, Bo E. Sernelius. 2015-06-04. Magnetoresistance of doped silicon. https://doi.org/10.1103/physrevb.91.214414

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