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arXiv · 1506.02337

A compact plasmonic MOS-based 2x2 electro-optic switch

Chenran Ye·Ke Liu·Richard A. Soref·Volker J. Sorger
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Abstract

We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, Indium-Tin-Oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 dB (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with Siliconon- Insulator platforms to for low-cost manufacturing.

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Chenran Ye, Ke Liu, Richard A. Soref, Volker J. Sorger. 2015-06-08. A compact plasmonic MOS-based 2x2 electro-optic switch. https://arxiv.org/abs/1506.02337

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