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arXiv · 1507.00381

Modulating carrier and sideband coupling strengths in a standing wave gate beam

Thomas E. deLaubenfels·Karl A. Burkhardt·Grahame Vittorini·J. True Merrill·Kenneth R. Brown·Jason M. Amini
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Abstract

We control the relative coupling strength of carrier and first order motional sideband interactions of a trapped ion by placing it in a resonant optical standing wave. Our configuration uses the surface of a microfabricated chip trap as a mirror, avoiding technical challenges of in-vacuum optical cavities. Displacing the ion along the standing wave, we show a periodic suppression of the carrier and sideband transitions with the cycles for the two cases $180^\circ$ out of phase with each other. This technique allows for suppression of off-resonant carrier excitations when addressing the motional sidebands, with applications in quantum simulation and quantum control. Using the standing wave fringes, we measure the relative ion height as a function of applied electric field, allowing for a precise measurement of ion displacement and, combined with measured micromotion amplitudes, a validation of trap numerical models.

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Thomas E. deLaubenfels, Karl A. Burkhardt, Grahame Vittorini, J. True Merrill, Kenneth R. Brown, Jason M. Amini. 2015-11-04. Modulating carrier and sideband coupling strengths in a standing wave gate beam. https://doi.org/10.1103/physreva.92.061402

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