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arXiv · 1507.00775

Anomalous Hall effect in a 2D magnetic semiconductor hetereostructure: Evidence of Berry phase effects in the hopping-transport regime

L. N. Oveshnikov·V. A. Kulbachinskii·A. B. Davydov·B. A. Aronzon·I. V. Rozhansky·N. S. Avkeriev·K. I. Kugel·V. Tripathi
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Abstract

The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a quantum well interacting with the Mn layer. The analysis of experimental data reveals four distinct temperature ranges differing in the behavior of AHE. The Mn layer induces an inhomogeneity of the hole gas leading to an interplay between the hopping and drift conductivities. It is shown that at sufficiently low temperatures, hopping conductivity favors the mechanisms of AHE related to the geometric (Berry-Pancharatnam) phase.

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L. N. Oveshnikov, V. A. Kulbachinskii, A. B. Davydov, B. A. Aronzon, I. V. Rozhansky, N. S. Avkeriev, K. I. Kugel, V. Tripathi. 2015-07-02. Anomalous Hall effect in a 2D magnetic semiconductor hetereostructure: Evidence of Berry phase effects in the hopping-transport regime. https://doi.org/10.1038/srep17158

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