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arXiv · 1507.05188

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

Yohta Sata·Rai Moriya·Sei Morikawa·Naoto Yabuki·Satoru Masubuchi·Tomoki Machida
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Abstract

We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10^5. These results point to the potential high performance of the graphene/MoSe2 vdW heterostructure for electronics applications.

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Yohta Sata, Rai Moriya, Sei Morikawa, Naoto Yabuki, Satoru Masubuchi, Tomoki Machida. 2015-07-18. Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface. https://doi.org/10.1063/1.4926973

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