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arXiv · 1507.06613

Effect of high oxygen pressure annealing on superconducting Nd1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets

M. Hoek·F. Coneri·D. P. Leusink·P. D. Eerkes·X. Renshaw Wang·H. Hilgenkamp
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Abstract

We show that the quality of Nd1.85Ce0.15CuO4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3 phase. The properties of these films are less dependent on the exact annealing procedure after deposition as compared to films grown from a stoichiometric target. Film growth can be followed by a 1 bar oxygen annealing, after an initial vacuum annealing, while retaining the superconducting properties and quality. This enables the integration of electron-doped cuprates with their hole-doped counterparts on a single chip, to create, for example, superconducting pn-junctions.

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M. Hoek, F. Coneri, D. P. Leusink, P. D. Eerkes, X. Renshaw Wang, H. Hilgenkamp. 2015-07-23. Effect of high oxygen pressure annealing on superconducting Nd1.85Ce0.15CuO4 thin films by pulsed laser deposition from Cu-enriched targets. https://doi.org/10.1088/0953-2048%2F27%2F4%2F044017

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