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arXiv · 1507.08884

A comprehensive analysis of the (R13xR13)R13.9{\deg} type II structure of silicene on Ag(111)

H. Jamgotchian·B. Ealet·H. Maradj·J. -Y. Hoarau·J. -P. Biberian·B. Aufray
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Abstract

In this paper, using the same geometrical approach than for the (2R3x2R3) R30{\deg} structure (H. Jamgotchian et al., 2015, Journal of Physics. Condensed Matter 27 395002), for the (R13xR13)R13.9{\deg} type II structure, we propose an atomic model of the silicene layer based on a periodic relaxation of the strain epitaxy. This relaxation creates periodic arrangements of perfect areas of (R13xR13)R13.9{\deg} type II structure surrounded by defect areas. A detailed analysis of the main published experimental results, obtained by Scanning Tunneling Microscopy and by Low Energy Electron Diffraction, shows a good agreement with the geometrical model.

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H. Jamgotchian, B. Ealet, H. Maradj, J. -Y. Hoarau, J. -P. Biberian, B. Aufray. 2015-07-31. A comprehensive analysis of the (R13xR13)R13.9{\deg} type II structure of silicene on Ag(111). https://doi.org/10.1088/0953-8984/28/19/195002

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