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arXiv · 1508.06030

G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors

D. S. Miserev·O. P. Sushkov
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Abstract

Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbit interaction. Due to these factors properties of hole bound states are highly unusual. We consider a single hole bound by a spherically symmetric potential, this can be an acceptor or a spherically symmetric quantum dot. Linear response to an external magnetic field is characterized by the bound state Lande g-factor. We calculate analytically g-factors of all bound states.

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D. S. Miserev, O. P. Sushkov. 2015-08-25. G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors. https://doi.org/10.1140/epjb%2Fe2016-60894-y

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