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arXiv · 1509.00553

Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot

R. Li·F. E. Hudson·A. S. Dzurak·A. R. Hamilton
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Abstract

In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of inter-dot level spacing and magnetic field. With varied inter-dot tunnel coupling we can identify different dominant spin relaxation mechanisms. Applying a strong out-of-plane magnetic field causes an avoided singlet-triplet level crossing, from which the heavy hole g-factor $\sim$ 0.93, and the strength of spin-orbit interaction $\sim$ 110 $\mu$eV, can be obtained. The demonstrated strong spin-orbit interaction of heavy hole promises fast local spin manipulation using only electrical fields, which is of great interest for quantum information processing.

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R. Li, F. E. Hudson, A. S. Dzurak, A. R. Hamilton. 2015-09-02. Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot. https://doi.org/10.1021/acs.nanolett.5b02561

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