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arXiv · 1509.01021

Spectral Sensitivity of Graphene/Silicon Heterojunction Photodetectors

Sarah Riazimehr·Andreas Bablich·Daniel Schneider·Satender Kataria·Vikram Passi·Chanyoung Yim·Georg S. Duesberg·Max C. Lemme
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Abstract

We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from the diodes fabricated on n- Si substrates in comparison with the devices on p-Si substrates in dark condition. Also, graphene/n-Si photodiodes show a considerable responsivity of 270 mA/W within the silicon spectral range in DC reverse bias condition. The present results are furthermore compared with that of a molybdenum disulfide (MoS2)/p-type silicon photodiodes.

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Sarah Riazimehr, Andreas Bablich, Daniel Schneider, Satender Kataria, Vikram Passi, Chanyoung Yim, Georg S. Duesberg, Max C. Lemme. 2015-09-03. Spectral Sensitivity of Graphene/Silicon Heterojunction Photodetectors. https://doi.org/10.1016/j.sse.2015.08.023

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