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arXiv · 1509.02375

Ultra-fast perpendicular Spin Orbit Torque MRAM

Murat Cubukcu·Olivier Boulle·Nikolaï Mikuszeit·Claire Hamelin·Thomas Brächer·Nathalie Lamard·Marie-Claire Cyrille·Liliana Buda-Prejbeanu·Kevin Garello·Ioan Mihai Miron·O. Klein·G. de Loubens·V. V. Naletov·Juergen Langer·Berthold Ocker·Pietro Gambardella·Gilles Gaudin
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Abstract

We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the ns range. Our results show that SOT-MRAM allows fast and low power write operations, which renders it promising for non-volatile cache memory applications.

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Murat Cubukcu, Olivier Boulle, Nikolaï Mikuszeit, Claire Hamelin, Thomas Brächer, Nathalie Lamard, Marie-Claire Cyrille, Liliana Buda-Prejbeanu, Kevin Garello, Ioan Mihai Miron, O. Klein, G. de Loubens, V. V. Naletov, Juergen Langer, Berthold Ocker, Pietro Gambardella, Gilles Gaudin. 2015-09-08. Ultra-fast perpendicular Spin Orbit Torque MRAM. https://doi.org/10.1109/tmag.2017.2772185

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