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arXiv · 1509.08246

Electronic transport under hydrostatic pressure and peculiar properties of the impurity energy spectrum in semiconductor arsenides of n-type: InAs, CdSnAs2, CdGeAs2 and GaAs

R. R. Bashirov·S. F. Gabibov·M. I. Daunov·A. Yu. MollaeV
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Abstract

The energy spectrum of vacancies in n-type bulk crystals of undoped arsenides: InAs, GaAs, CdSnAs2 and CdGeAs2 has been investigated upon the data on pressure and temperature dependences of kinetic coefficients. It is concluded, that deep donor levels correspond to native vacancies of arsenic in these semiconductor materials. The vacancy level positions in the energy scale relatively to the conductivity band edge and their pressure coefficients are defined.

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R. R. Bashirov, S. F. Gabibov, M. I. Daunov, A. Yu. MollaeV. 2015-09-28. Electronic transport under hydrostatic pressure and peculiar properties of the impurity energy spectrum in semiconductor arsenides of n-type: InAs, CdSnAs2, CdGeAs2 and GaAs. https://arxiv.org/abs/1509.08246

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