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arXiv · 1510.02408

Electron and hole g factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths

V. V. Belykh·A. Greilich·D. R. Yakovlev·M. Yacob·J. P. Reithmaier·M. Benyoucef·M. Bayer
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Abstract

We extend the range of quantum dot (QD) emission energies where electron and hole $g$ factors have been measured to the practically important telecom range. The spin dynamics in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled QDs with emission wavelengths at about 1.6 $μ$m grown on InP substrate is investigated by pump-probe Faraday rotation spectroscopy in a magnetic field. Pronounced oscillations on two different frequencies, corresponding to the QD electron and hole spin precessions about the field are observed from which the corresponding $g$ factors are determined. The electron $g$ factor of about $-1.9$ has the largest negative value so far measured for III-V QDs by optical methods. This value, as well as the $g$ factors reported for other III-V QDs, differ from those expected for bulk semiconductors at the same emission energies, and this difference increases significantly for decreasing energies.

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V. V. Belykh, A. Greilich, D. R. Yakovlev, M. Yacob, J. P. Reithmaier, M. Benyoucef, M. Bayer. 2015-10-08. Electron and hole g factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths. https://doi.org/10.1103/physrevb.92.165307

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