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arXiv · 1511.00091

Quantum interference effects in chemical vapor deposited graphene

Nam-Hee Kim·Yun-Sok Shin·Serin Park·Hong-Seok Kim·Jun Sung Lee·Chi Won Ahn·Jeong-O Lee·Yong-Joo Doh
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Abstract

We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying scattering mechanisms. The characteristic length scale for phase coherence is compared with that estimated from universal conductance fluctuations in the microporeformed graphene sample. These extensive temperature- and gate-dependent measurements of the intervalley and intravalley scattering lengths provide important and useful insight for the macroscopic applications of graphene-based quantum devices.

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Nam-Hee Kim, Yun-Sok Shin, Serin Park, Hong-Seok Kim, Jun Sung Lee, Chi Won Ahn, Jeong-O Lee, Yong-Joo Doh. 2015-10-31. Quantum interference effects in chemical vapor deposited graphene. https://doi.org/10.1016/j.cap.2015.10.007

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