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arXiv · 1511.00996

Effect of temperature on In_x Ga_(1-x) As/GaAs quantum dot lasing

Mahdi Ahmadi Borji·Esfandiar Rajaei
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Abstract

In this paper, the strain, band-edge, and energy levels of pyramidal In_x Ga_(1-x) As/GaAs quantum dot lasers (QDLs) are investigated by 1-band effective mass approach. It is shown that while temperature has no remarkable effect on the strain tensor, the band gap lowers and the radiation wavelength elongates by rising temperature. Also, band-gap and laser energy do not linearly decrease by temperature rise. Our results appear to coincide with former researches. Keywords: quantum dot laser, strain tensor, band edge, nano-electronics, temperature effect

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Mahdi Ahmadi Borji, Esfandiar Rajaei. 2015-11-01. Effect of temperature on In_x Ga_(1-x) As/GaAs quantum dot lasing. https://doi.org/10.1007/s12043-017-1424-x

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