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arXiv · 1511.03433

Site selective growth of heteroepitaxial diamond nanoislands containing single SiV centers

Carsten Arend·Patrick Appel·Jonas Nils Becker·Marcel Schmidt·Martin Fischer·Stefan Gsell·Matthias Schreck·Christoph Becher·Patrick Maletinsky·Elke Neu
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Abstract

We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned areas evolve into regular arrays of (001) oriented diamond nano-islands with diameters of <500nm and a height of approx. 60 nm. In the islands, we identify single SiV color centers with narrow zero phonon lines down to 1 nm at room temperature.

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Carsten Arend, Patrick Appel, Jonas Nils Becker, Marcel Schmidt, Martin Fischer, Stefan Gsell, Matthias Schreck, Christoph Becher, Patrick Maletinsky, Elke Neu. 2015-11-11. Site selective growth of heteroepitaxial diamond nanoislands containing single SiV centers. https://doi.org/10.1063/1.4941804

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