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arXiv · 1511.05773

Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer

Yong-Chang Lau·Davide Betto·Karsten Rode·JMD Coey·Plamen Stamenov
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Abstract

Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves passing a high current across an ultrathin tunnel barrier. A small symmetry-breaking bias field is usually needed for deterministic SOT switching but it is impractical to generate the field externally for spintronic applications. Here, we demonstrate robust zero-field SOT switching of a perpendicular Co90Fe10 (CoFe) free layer where the symmetry is broken by magnetic coupling to a second in-plane exchange-biased CoFe layer via a nonmagnetic Ru spacer. The preferred magnetic state of the free layer is determined by the current polarity and the nature of the interlayer exchange coupling (IEC). Our strategy offers a scalable solution to realize bias-field-free SOT switching that can lead to a generation of SOT-based devices, that combine high storage density and endurance with potentially low power consumption.

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Yong-Chang Lau, Davide Betto, Karsten Rode, JMD Coey, Plamen Stamenov. 2015-11-18. Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer. https://arxiv.org/abs/1511.05773

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