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arXiv · 1511.07109

Endurance Write Speed Tradeoffs in Nonvolatile Memories

Dmitri Strukov
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Abstract

We derive phenomenological model for endurance-write time switching tradeoff for nonvolatile memories with thermally activated switching mechanisms. The model predicts linear to cubic dependence of endurance on write time for metal oxide memristors and flash memories, which is partially supported by experimental data for the breakdown of metal-oxide thin films.

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Dmitri Strukov. 2015-11-23. Endurance Write Speed Tradeoffs in Nonvolatile Memories. https://doi.org/10.1007/s00339-016-9841-0

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