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arXiv · 1511.07631

Nano-scale strain engineering of graphene and graphene-based devices

N. -C. Yeh·C. -C. Hsu·M. L. Teague·J. -Q. Wang·D. A. Boyd·C. -C. Chen
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Abstract

Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidences for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nanoscale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology.

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N. -C. Yeh, C. -C. Hsu, M. L. Teague, J. -Q. Wang, D. A. Boyd, C. -C. Chen. 2015-11-24. Nano-scale strain engineering of graphene and graphene-based devices. https://doi.org/10.1007/s10409-015-0548-9

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