arXiv · 1511.07665
Structural Properties and Thermodynamics of Hafnium sub-oxides in RRAM
Abstract
We study the structural and electronic properties of various hafnium sub-oxides HfzO from z = 9 to z = 0.5, by ab initio simulation using Density Functional Theory. The stability of these sub-oxides is studied against monoclinic HfO2. The progressive oxidation of a given HfzO is also envisaged toward stoichiometric HfO2. The analogy with a conductive region of electrons inside a HfO2 matrix is discussed within the context of Oxide-based Resistive Random Access Memories (OxRRAM) devices which employ hafnium dioxide as an insulator.
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Philippe Blaise, Boubacar Traore. 2015-11-24. Structural Properties and Thermodynamics of Hafnium sub-oxides in RRAM. https://arxiv.org/abs/1511.07665
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