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arXiv · 1511.07848

Inverse Spin Hall Effect from pulsed Spin Current in Organic Semiconductors with Tunable Spin-Orbit Coupling

Dali Sun·Kipp J. van Schooten·Hans Malissa·Marzieh Kavand·Chuang Zhang·Christoph Boehme·Z. Valy Vardeny
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Abstract

Exploration of spin-currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates has been of great interest for potential spintronics applications. Due to the inherently weak spin-orbit coupling (SOC) of OSECs, their inverse spin Hall effect (ISHE) response is very subtle; limited by the microwave power applicable under continuous-wave (cw) excitation. Here we introduce a novel approach for generating significant ISHE signals using pulsed ferromagnetic resonance, where the ISHE is ~2-3 orders of magnitude larger compared to cw excitation. This strong ISHE enables us to investigate a variety of OSECs ranging from pi-conjugated polymers with strong SOC that contain intrachain platinum atoms, to weak SOC polymers, to C60 films, where the SOC is predominantly caused by the molecule surface curvature. The pulsed-ISHE technique offers a robust route for efficient injection and detection schemes of spin-currents at room temperature, and paves the way for spin-orbitronics in plastic materials.

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Dali Sun, Kipp J. van Schooten, Hans Malissa, Marzieh Kavand, Chuang Zhang, Christoph Boehme, Z. Valy Vardeny. 2015-11-24. Inverse Spin Hall Effect from pulsed Spin Current in Organic Semiconductors with Tunable Spin-Orbit Coupling. https://doi.org/10.1038/nmat4618

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